MOSFET P-CH 20V 36A 8TSON TPN4R712MD,L1Q
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Description:
MOSFET P-CH 20V 36A 8TSON
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
TPN4R712MD,L1Q(MOSFET)ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory58867,Price reference "real-time change" China/Hongkong。 TPN4R712MD,L1Q package/specs, Download TPN4R712MD,L1Q、Datasheet。