MOSFET N-CH 60V 26A 8TSON TPN7R506NH,L1Q
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Description:
MOSFET N-CH 60V 26A 8TSON
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
TPN7R506NH,L1Q(MOSFET)ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory28771,Price reference "real-time change" China/Hongkong。 TPN7R506NH,L1Q package/specs, Download TPN7R506NH,L1Q、Datasheet。