MOSFET N-CH 150V 9A 8SOP TPH5900CNH,L1Q
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Description:
MOSFET N-CH 150V 9A 8SOP
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
TPH5900CNH,L1Q(MOSFET)ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory17223,Price reference "real-time change" China/Hongkong。 TPH5900CNH,L1Q package/specs, Download TPH5900CNH,L1Q、Datasheet。