MOSFET N-CH 250V 10A 8SOP TPH1110FNH,L1Q
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Description:
MOSFET N-CH 250V 10A 8SOP
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
TPH1110FNH,L1Q(MOSFET)ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory6607,Price reference "real-time change" China/Hongkong。 TPH1110FNH,L1Q package/specs, Download TPH1110FNH,L1Q、Datasheet。