MOSFET N-CH 200V 13A 8SOP TPH6400ENH,L1Q
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Description:
MOSFET N-CH 200V 13A 8SOP
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
TPH6400ENH,L1Q(MOSFET)ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory58371,Price reference "real-time change" China/Hongkong。 TPH6400ENH,L1Q package/specs, Download TPH6400ENH,L1Q、Datasheet。