MOSFET N-CH 650V 11.5A DPAK TK290P65Y,RQ
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Description:
MOSFET N-CH 650V 11.5A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
TK290P65Y,RQ(MOSFET)ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory55811,Price reference "real-time change" China/Hongkong。 TK290P65Y,RQ package/specs, Download TK290P65Y,RQ、Datasheet。