MOSFET N-CH 900V 9A TO3P TK9J90E,S1E
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Description:
MOSFET N-CH 900V 9A TO3P
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
TK9J90E,S1E(MOSFET)ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory33165,Price reference "real-time change" China/Hongkong。 TK9J90E,S1E package/specs, Download TK9J90E,S1E、Datasheet。