TW070J120B,S1Q parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Toshiba

Model:

TW070J120B,S1Q

Description:

SICFET N-CH 1200V 36A TO3P

Stock:

49891

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$6.21

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Parameters

Current at 25 ° C - continuous drain (Id)

36A(Tc)

Drain source voltage (Vdss)

1200 V

Drive voltage (maximum RdsOn, minimum RdsOn)

20V

FET Type

N channels

FET function

standard

Gate charge (Qg) at different Vgs (maximum)

67 nC @ 20 V

Input capacitance at different Vds (Ciss) (maximum)

1680 pF @ 800 V

On resistance (maximum) for different Ids and Vgs

90 mΩ @ 18A,20V

Power dissipation (maximum)

272W(Tc)

Vgs (max)

±25V,-10V

Vgs (th) (maximum) for different Ids

5.8V @ 20mA

packing

pipe

series

technology

SiCFET(silicon carbide)

working temperature

-55°C ~ 175°C

Encapsulation/Housing

TO-3P(N)

Country of origin

Japan

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Through-Hole

Part status

On sale

DataSheet

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TW070J120B,S1Q（MOSFET）ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory49891,Price reference "real-time change" China/Hongkong。 TW070J120B,S1Q package/specs, Download TW070J120B,S1Q、Datasheet。