MOSFET N CH 100V 17A 8TSON-ADV TPN1600ANH,L1Q
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Description:
MOSFET N CH 100V 17A 8TSON-ADV
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
TPN1600ANH,L1Q(MOSFET)ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory3959,Price reference "real-time change" China/Hongkong。 TPN1600ANH,L1Q package/specs, Download TPN1600ANH,L1Q、Datasheet。