MOSFET N-CH 150V 9A 8TSON TPN5900CNH,L1Q
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Description:
MOSFET N-CH 150V 9A 8TSON
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
TPN5900CNH,L1Q(MOSFET)ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory56603,Price reference "real-time change" China/Hongkong。 TPN5900CNH,L1Q package/specs, Download TPN5900CNH,L1Q、Datasheet。