MOSFET N CH 100V 32A 8-SOP TPH8R80ANH,L1Q
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Description:
MOSFET N CH 100V 32A 8-SOP
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
TPH8R80ANH,L1Q(MOSFET)ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory28441,Price reference "real-time change" China/Hongkong。 TPH8R80ANH,L1Q package/specs, Download TPH8R80ANH,L1Q、Datasheet。