TK8R2A06PL,S4X parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Toshiba

Model:

TK8R2A06PL,S4X

Description:

MOSFET N-CH 60V 50A TO220SIS

Stock:

79051

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.2

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Parameters

Current at 25 ° C - continuous drain (Id)

50A(Tc)

Drain source voltage (Vdss)

60 V

Drive voltage (maximum RdsOn, minimum RdsOn)

4.5V,10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

28.4 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

1990 pF @ 25 V

On resistance (maximum) for different Ids and Vgs

11.4 mΩ @ 8A,4.5V

Power dissipation (maximum)

36W(Tc)

Vgs (max)

±20V

Vgs (th) (maximum) for different Ids

2.5V @ 300µA

packing

pipe

series

U-MOSIX-H

technology

MOSFET(Metal oxide)

working temperature

175°C(TJ)

Encapsulation/Housing

TO-220SIS

Country of origin

Japan

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Through-Hole

Part status

On sale

DataSheet

TK8R2A06PL,S4X（MOSFET）ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory79051,Price reference "real-time change" China/Hongkong。 TK8R2A06PL,S4X package/specs, Download TK8R2A06PL,S4X、Datasheet。