MOSFET N-CH 60V 30A TO220SIS TK30A06N1,S4X
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Description:
MOSFET N-CH 60V 30A TO220SIS
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
TK30A06N1,S4X(MOSFET)ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory93557,Price reference "real-time change" China/Hongkong。 TK30A06N1,S4X package/specs, Download TK30A06N1,S4X、Datasheet。