MOSFET N-CH 100V 22A TO220SIS TK22A10N1,S4X
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Description:
MOSFET N-CH 100V 22A TO220SIS
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
TK22A10N1,S4X(MOSFET)ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory98714,Price reference "real-time change" China/Hongkong。 TK22A10N1,S4X package/specs, Download TK22A10N1,S4X、Datasheet。