X35 PB-F POWER MOSFET TRANSISTOR TK3R2E06PL,S1X
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Description:
X35 PB-F POWER MOSFET TRANSISTOR
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
TK3R2E06PL,S1X(MOSFET)ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory94641,Price reference "real-time change" China/Hongkong。 TK3R2E06PL,S1X package/specs, Download TK3R2E06PL,S1X、Datasheet。