MOSFET N-CH 900V 3A TO220SIS 2SK3564(STA4,Q,M)
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Description:
MOSFET N-CH 900V 3A TO220SIS
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
2SK3564(STA4,Q,M)(MOSFET)ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory13362,Price reference "real-time change" China/Hongkong。 2SK3564(STA4,Q,M) package/specs, Download 2SK3564(STA4,Q,M)、Datasheet。