TK8A65D(STA4,Q,M) parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Toshiba

Model:

TK8A65D(STA4,Q,M)

Description:

MOSFET N-CH 650V 8A TO220SIS

Stock:

33467

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.46

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Parameters

Current at 25 ° C - continuous drain (Id)

8A(Ta)

Drain source voltage (Vdss)

650 V

Drive voltage (maximum RdsOn, minimum RdsOn)

10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

25 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

1350 pF @ 25 V

On resistance (maximum) for different Ids and Vgs

840 mΩ @ 4A,10V

Power dissipation (maximum)

45W(Tc)

Vgs (max)

±30V

Vgs (th) (maximum) for different Ids

4V @ 1mA

packing

bulk

series

π-MOSVII

technology

MOSFET(Metal oxide)

working temperature

150°C(TJ)

Encapsulation/Housing

TO-220SIS

Country of origin

Japan

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Through-Hole

Part status

On sale

DataSheet

TK8A65D(STA4,Q,M)（MOSFET）ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory33467,Price reference "real-time change" China/Hongkong。 TK8A65D(STA4,Q,M) package/specs, Download TK8A65D(STA4,Q,M)、Datasheet。