MOSFET N-CH 600V 25A TO220 TK25E60X,S1X
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Description:
MOSFET N-CH 600V 25A TO220
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
TK25E60X,S1X(MOSFET)ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory80731,Price reference "real-time change" China/Hongkong。 TK25E60X,S1X package/specs, Download TK25E60X,S1X、Datasheet。