X35 PB-F POWER MOSFET TRANSISTOR TK16J60W,S1VE
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Description:
X35 PB-F POWER MOSFET TRANSISTOR
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
TK16J60W,S1VE(MOSFET)ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory15320,Price reference "real-time change" China/Hongkong。 TK16J60W,S1VE package/specs, Download TK16J60W,S1VE、Datasheet。