MOSFET N-CH 600V 30.8A TO220 TK31E60X,S1X
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Description:
MOSFET N-CH 600V 30.8A TO220
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
TK31E60X,S1X(MOSFET)ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory39510,Price reference "real-time change" China/Hongkong。 TK31E60X,S1X package/specs, Download TK31E60X,S1X、Datasheet。