MOSFET N-CH 600V 38.8A TO3P TK39J60W,S1VQ
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Description:
MOSFET N-CH 600V 38.8A TO3P
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
TK39J60W,S1VQ(MOSFET)ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory68912,Price reference "real-time change" China/Hongkong。 TK39J60W,S1VQ package/specs, Download TK39J60W,S1VQ、Datasheet。