MOSFET P-CH 20V 4A ES6 SSM6J212FE,LF
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Description:
MOSFET P-CH 20V 4A ES6
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
SSM6J212FE,LF(MOSFET)ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory3711,Price reference "real-time change" China/Hongkong。 SSM6J212FE,LF package/specs, Download SSM6J212FE,LF、Datasheet。