MOSFET N-CH 600V 3.7A TO220SIS TK1K9A60F,S4X
The pictures are for reference only
Description:
MOSFET N-CH 600V 3.7A TO220SIS
The market price fluctuates. Please consult the customer service for the actual price
Contact Us
Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
TK1K9A60F,S4X(MOSFET)ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory68498,Price reference "real-time change" China/Hongkong。 TK1K9A60F,S4X package/specs, Download TK1K9A60F,S4X、Datasheet。