SMOS LOW RON VDS:-60V VGSS:+10/- SSM3J168F,LXHF
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Description:
SMOS LOW RON VDS:-60V VGSS:+10/-
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
Automotive, AEC-Q101, U-MOSVI
DataSheet
SSM3J168F,LXHF(MOSFET)ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory93377,Price reference "real-time change" China/Hongkong。 SSM3J168F,LXHF package/specs, Download SSM3J168F,LXHF、Datasheet。