MOSFET P-CH 40V 40A 8TSON XPN9R614MC,L1XHQ
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Description:
MOSFET P-CH 40V 40A 8TSON
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
Automotive, AEC-Q101, U-MOSVI
8-TSON Advance-WF(3.1x3.1)
DataSheet
XPN9R614MC,L1XHQ(MOSFET)ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory7385,Price reference "real-time change" China/Hongkong。 XPN9R614MC,L1XHQ package/specs, Download XPN9R614MC,L1XHQ、Datasheet。