MOSFET P-CH 60V 8A DPAK TJ8S06M3L(T6L1,NQ)
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Description:
MOSFET P-CH 60V 8A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
TJ8S06M3L(T6L1,NQ)(MOSFET)ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory92378,Price reference "real-time change" China/Hongkong。 TJ8S06M3L(T6L1,NQ) package/specs, Download TJ8S06M3L(T6L1,NQ)、Datasheet。