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    Home/    Category/    MOSFET/    TK6A65W,S5X

    MOSFET N-CH 650V 5.8A TO220SIS TK6A65W,S5X

    TK6A65W,S5X image
    The pictures are for reference only
    Brand:
    Toshiba
    Model:
    TK6A65W,S5X
    Description:
    MOSFET N-CH 650V 5.8A TO220SIS
    Stock:
    92236
    Type:
    goods in stock
    Store:
    Shenzhen/Hong kong
    DataSheet:
    ECAD Model:
    Price：$0.28
    The market price fluctuates. Please consult the customer service for the actual price
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    Contact UsContact Us
    座机icoTel ：0755-82988826
    手机icoPhone：13794459602(Wechat)
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    产品参数icoParameters
  • Current at 25 ° C - continuous drain (Id)
    5.8A(Ta)
  • Drain source voltage (Vdss)
    650 V
  • Drive voltage (maximum RdsOn, minimum RdsOn)
    10V
  • FET Type
    N channels
  • FET function
    -
  • Gate charge (Qg) at different Vgs (maximum)
    11 nC @ 10 V
  • Input capacitance at different Vds (Ciss) (maximum)
    390 pF @ 300 V
  • On resistance (maximum) for different Ids and Vgs
    1 Ω @ 2.9A,10V
  • Power dissipation (maximum)
    30W(Tc)
  • Vgs (max)
    ±30V
  • Vgs (th) (maximum) for different Ids
    3.5V @ 180µA
  • packing
    pipe
  • series
    DTMOSIV
  • technology
    MOSFET(Metal oxide)
  • working temperature
    150°C(TJ)
  • Encapsulation/Housing
    TO-220SIS
  • Country of origin
    Japan
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Through-Hole
  • Part status
    On sale
    • PDFicoDataSheet
    TK6A65W,S5X（MOSFET）ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory92236,Price reference "real-time change" China/Hongkong。 TK6A65W,S5X package/specs, Download TK6A65W,S5X、Datasheet。
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