MOSFET N-CH 650V 7.8A TO220SIS TK8A65W,S5X
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Description:
MOSFET N-CH 650V 7.8A TO220SIS
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
TK8A65W,S5X(MOSFET)ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory56688,Price reference "real-time change" China/Hongkong。 TK8A65W,S5X package/specs, Download TK8A65W,S5X、Datasheet。