MOSFET N-CH 600V 7A TO220SIS TK7A60W,S4VX
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Description:
MOSFET N-CH 600V 7A TO220SIS
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
TK7A60W,S4VX(MOSFET)ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory48383,Price reference "real-time change" China/Hongkong。 TK7A60W,S4VX package/specs, Download TK7A60W,S4VX、Datasheet。