MOSFET N-CH 650V 6A TO220SIS TK6A65D(STA4,Q,M)
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Description:
MOSFET N-CH 650V 6A TO220SIS
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
TK6A65D(STA4,Q,M)(MOSFET)ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory18738,Price reference "real-time change" China/Hongkong。 TK6A65D(STA4,Q,M) package/specs, Download TK6A65D(STA4,Q,M)、Datasheet。