MOSFET N-CH 600V 25A 4DFN TK25V60X,LQ
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Description:
MOSFET N-CH 600V 25A 4DFN
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
TK25V60X,LQ(MOSFET)ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory41535,Price reference "real-time change" China/Hongkong。 TK25V60X,LQ package/specs, Download TK25V60X,LQ、Datasheet。