MOSFET N-CH 600V 15.8A TO220SIS TK16A60W5,S4VX
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Description:
MOSFET N-CH 600V 15.8A TO220SIS
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
TK16A60W5,S4VX(MOSFET)ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory42701,Price reference "real-time change" China/Hongkong。 TK16A60W5,S4VX package/specs, Download TK16A60W5,S4VX、Datasheet。