MOSFET N CH 600V 11.5A TO-220 TK12E60W,S1VX
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Description:
MOSFET N CH 600V 11.5A TO-220
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
TK12E60W,S1VX(MOSFET)ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory29708,Price reference "real-time change" China/Hongkong。 TK12E60W,S1VX package/specs, Download TK12E60W,S1VX、Datasheet。