MOSFET N CH 600V 15.8A D2PAK TK16G60W,RVQ
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Description:
MOSFET N CH 600V 15.8A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
TK16G60W,RVQ(MOSFET)ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory9423,Price reference "real-time change" China/Hongkong。 TK16G60W,RVQ package/specs, Download TK16G60W,RVQ、Datasheet。