TK20N60W,S1VF parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Toshiba

Model:

TK20N60W,S1VF

Description:

MOSFET N-CH 600V 20A TO247

Stock:

28669

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.95

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Parameters

Current at 25 ° C - continuous drain (Id)

20A(Ta)

Drain source voltage (Vdss)

600 V

Drive voltage (maximum RdsOn, minimum RdsOn)

10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

48 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

1680 pF @ 300 V

On resistance (maximum) for different Ids and Vgs

155 mΩ @ 10A,10V

Power dissipation (maximum)

165W(Tc)

Vgs (max)

±30V

Vgs (th) (maximum) for different Ids

3.7V @ 1mA

packing

pipe

series

DTMOSIV

technology

MOSFET(Metal oxide)

working temperature

150°C(TJ)

Encapsulation/Housing

TO-247

Country of origin

Japan

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Through-Hole

Part status

On sale

DataSheet

TK20N60W,S1VF（MOSFET）ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory28669,Price reference "real-time change" China/Hongkong。 TK20N60W,S1VF package/specs, Download TK20N60W,S1VF、Datasheet。