MOSFET P-CH 20V 2.7A VS-8 TPCF8B01(TE85L,F,M
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Description:
MOSFET P-CH 20V 2.7A VS-8
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Schottky diode (isolated)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
TPCF8B01(TE85L,F,M(MOSFET)ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory54898,Price reference "real-time change" China/Hongkong。 TPCF8B01(TE85L,F,M package/specs, Download TPCF8B01(TE85L,F,M、Datasheet。