TPCA8105(TE12L,Q,M parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Toshiba

Model:

TPCA8105(TE12L,Q,M

Description:

MOSFET P-CH 12V 6A 8SOP

Stock:

86455

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Offer

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Parameters

Current at 25 ° C - continuous drain (Id)

6A(Ta)

Drain source voltage (Vdss)

12 V

Drive voltage (maximum RdsOn, minimum RdsOn)

1.8V,4.5V

FET Type

P channels

FET function

Gate charge (Qg) at different Vgs (maximum)

18 nC @ 5 V

Input capacitance at different Vds (Ciss) (maximum)

1600 pF @ 10 V

On resistance (maximum) for different Ids and Vgs

33 mΩ @ 3A,4.5V

Power dissipation (maximum)

1.6W(Ta),20W(Tc)

Vgs (max)

±8V

Vgs (th) (maximum) for different Ids

1.2V @ 200µA

packing

series

technology

MOSFET(Metal oxide)

working temperature

150°C(TJ)

Encapsulation/Housing

8-SOP Advance(5x5)

Country of origin

Japan

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

stop production

DataSheet

TPCA8105(TE12L,Q,M（MOSFET）ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory86455,Price reference "real-time change" China/Hongkong。 TPCA8105(TE12L,Q,M package/specs, Download TPCA8105(TE12L,Q,M、Datasheet。