MOSFET N-CH 600V 15.8A TO3P TK16J60W,S1VQ
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Description:
MOSFET N-CH 600V 15.8A TO3P
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
TK16J60W,S1VQ(MOSFET)ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory79012,Price reference "real-time change" China/Hongkong。 TK16J60W,S1VQ package/specs, Download TK16J60W,S1VQ、Datasheet。