2SJ668(TE16L1,NQ) parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Toshiba

Model:

2SJ668(TE16L1,NQ)

Description:

MOSFET P-CHANNEL 60V 5A PW-MOLD

Stock:

90283

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Offer

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Parameters

Current at 25 ° C - continuous drain (Id)

5A(Ta)

Drain source voltage (Vdss)

60 V

Drive voltage (maximum RdsOn, minimum RdsOn)

4V,10V

FET Type

P channels

FET function

Gate charge (Qg) at different Vgs (maximum)

15 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

700 pF @ 10 V

On resistance (maximum) for different Ids and Vgs

170 mΩ @ 2.5A,10V

Power dissipation (maximum)

20W(Tc)

Vgs (max)

±20V

Vgs (th) (maximum) for different Ids

2V @ 1mA

packing

series

U-MOSIII

technology

MOSFET(Metal oxide)

working temperature

150°C

Encapsulation/Housing

PW-MOLD

Country of origin

Japan

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

stop production

DataSheet

2SJ668(TE16L1,NQ)（MOSFET）ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory90283,Price reference "real-time change" China/Hongkong。 2SJ668(TE16L1,NQ) package/specs, Download 2SJ668(TE16L1,NQ)、Datasheet。