TPCA8109(TE12L1,V parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Toshiba

Model:

TPCA8109(TE12L1,V

Description:

MOSFET P-CH 30V 24A 8SOP

Stock:

86235

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Offer

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Parameters

Current at 25 ° C - continuous drain (Id)

24A(Ta)

Drain source voltage (Vdss)

30 V

Drive voltage (maximum RdsOn, minimum RdsOn)

4.5V,10V

FET Type

P channels

FET function

Gate charge (Qg) at different Vgs (maximum)

56 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

2400 pF @ 10 V

On resistance (maximum) for different Ids and Vgs

9 mΩ @ 12A,10V

Power dissipation (maximum)

1.6W(Ta),30W(Tc)

Vgs (max)

+20V,-25V

Vgs (th) (maximum) for different Ids

2V @ 500µA

packing

series

U-MOSVI

technology

MOSFET(Metal oxide)

working temperature

150°C

Encapsulation/Housing

8-SOP Advance(5x5)

Country of origin

Japan

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

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TPCA8109(TE12L1,V（MOSFET）ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory86235,Price reference "real-time change" China/Hongkong。 TPCA8109(TE12L1,V package/specs, Download TPCA8109(TE12L1,V、Datasheet。