40V 5.8M OPTIMOS MOSFET SUPERSO8 ISC058N04NM5ATMA1
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Description:
40V 5.8M OPTIMOS MOSFET SUPERSO8
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
ISC058N04NM5ATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory9523,Price reference "real-time change" China/Hongkong。 ISC058N04NM5ATMA1 package/specs, Download ISC058N04NM5ATMA1、Datasheet。