SICFET N-CH 1.2KV 56A TO247-3 IMW120R030M1HXKSA1
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Description:
SICFET N-CH 1.2KV 56A TO247-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IMW120R030M1HXKSA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory92653,Price reference "real-time change" China/Hongkong。 IMW120R030M1HXKSA1 package/specs, Download IMW120R030M1HXKSA1、Datasheet。