MOSFET N-CH 600V 9A D2PAK IPB60R360P7ATMA1
The pictures are for reference only
Description:
MOSFET N-CH 600V 9A D2PAK
The market price fluctuates. Please consult the customer service for the actual price
Contact Us
Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPB60R360P7ATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory94412,Price reference "real-time change" China/Hongkong。 IPB60R360P7ATMA1 package/specs, Download IPB60R360P7ATMA1、Datasheet。