MOSFET N-CH 650V 18A TO252-3 IPD60R180P7ATMA1
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Description:
MOSFET N-CH 650V 18A TO252-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPD60R180P7ATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory65305,Price reference "real-time change" China/Hongkong。 IPD60R180P7ATMA1 package/specs, Download IPD60R180P7ATMA1、Datasheet。