SILICON CARBIDE MOSFET, PG-TO247 IMZA65R083M1HXKSA1
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Description:
SILICON CARBIDE MOSFET, PG-TO247
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IMZA65R083M1HXKSA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory47011,Price reference "real-time change" China/Hongkong。 IMZA65R083M1HXKSA1 package/specs, Download IMZA65R083M1HXKSA1、Datasheet。