MOSFET N-CH 650V 3.6A TO252 IPD60R1K5PFD7SAUMA1
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Model:
IPD60R1K5PFD7SAUMA1
Description:
MOSFET N-CH 650V 3.6A TO252
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPD60R1K5PFD7SAUMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory19329,Price reference "real-time change" China/Hongkong。 IPD60R1K5PFD7SAUMA1 package/specs, Download IPD60R1K5PFD7SAUMA1、Datasheet。