MOSFET N-CH 600V 5.2A THIN-PAK IPLK60R1K0PFD7ATMA1
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Model:
IPLK60R1K0PFD7ATMA1
Description:
MOSFET N-CH 600V 5.2A THIN-PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPLK60R1K0PFD7ATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory41556,Price reference "real-time change" China/Hongkong。 IPLK60R1K0PFD7ATMA1 package/specs, Download IPLK60R1K0PFD7ATMA1、Datasheet。