AUIRF7647S2TR parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Infineon

Model:

AUIRF7647S2TR

Description:

MOSFET N-CH 100V 5.9A DIRECTFET

Stock:

76546

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.43

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Offer

Tel ：0755-82988826

Phone：13794459602(Wechat)

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Parameters

Current at 25 ° C - continuous drain (Id)

5.9A(Ta),24A(Tc)

Drain source voltage (Vdss)

100 V

Drive voltage (maximum RdsOn, minimum RdsOn)

10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

21 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

910 pF @ 25 V

On resistance (maximum) for different Ids and Vgs

31 mΩ @ 14A,10V

Power dissipation (maximum)

2.5W(Ta),41W(Tc)

Vgs (max)

±20V

Vgs (th) (maximum) for different Ids

5V @ 50µA

packing

TR,CT

series

HEXFET®

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 175°C(TJ)

Encapsulation/Housing

DIRECTFET™ SC

Country of origin

Germany

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

下载AUIRF7647S2TR.pdf

AUIRF7647S2TR（MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory76546,Price reference "real-time change" China/Hongkong。 AUIRF7647S2TR package/specs, Download AUIRF7647S2TR、Datasheet。