40V N-CH FET SOURCE-DOWN CG 3X3 IQE013N04LM6CGATMA1
The pictures are for reference only
Model:
IQE013N04LM6CGATMA1
Description:
40V N-CH FET SOURCE-DOWN CG 3X3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
Surface mount,Wettable wings
DataSheet
IQE013N04LM6CGATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory65890,Price reference "real-time change" China/Hongkong。 IQE013N04LM6CGATMA1 package/specs, Download IQE013N04LM6CGATMA1、Datasheet。