MOSFET N-CH 650V 14A 8HSOF IPT65R195G7XTMA1
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Description:
MOSFET N-CH 650V 14A 8HSOF
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPT65R195G7XTMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory87556,Price reference "real-time change" China/Hongkong。 IPT65R195G7XTMA1 package/specs, Download IPT65R195G7XTMA1、Datasheet。